? small package ? low forward voltage ? fast reverse recovery time ? small total capacitance parameter symbol value unit maximum peak reverse voltage v rm 85 v reverse voltage v r 80 v maximum peak forward current i fm 200 ma surge current (10ms) i fsm 1 a average forward current io 100 ma power dissipation p tot 200 mw junction temperature t j 125 o c storage temperature range t s -55 ? +125 o c characteristics at t j = 25 o c parameter test conditions symbol min typ max unit i f = 1ma v f - 0.62 - v i f = 10ma v f - 0.75 - v forward voltage i f = 100ma v f - 0.98 1.2 v v r = 30v i r - - 0.1 a reverse current v r =80v i r - - 0.5 a total capacitance v r = 0, f = 1mh z c t - 0.5 3 pf reverse recovery time i f = 10ma t rr - 1.6 4 ns MCL-SS352 silicon epitaxial planar diode features maximum ratings @ t a = 25c unless otherwise specified 1 of 2 www.sunmate.tw case: sod-80/ll34, glass terminals: solderable per mil-std-202, method 208 polarity: cathode band weight: 0.05 grams (approx.) mechanical data ! ! ! ! ! ll34/ sod-80 a c b dim min max a 3.30 3.70 b 1.30 1.60 c 0.28 0.50 all dimensions in mm
forward voltage v f (v) ta=100 c m m m i f - v f f o r w a r d c u r r e n t i f ( a ) r e v e r s e c u r r e n t i r ( a ) n n n n reverse voltage v r (v) ta=100 c i r - v r reverse voltage v r (v) c a p a c i t a n c e c t ( p f ) c t - v r 2 of 2 www.sunmate.tw
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